Research Areas
We use a variety of first-principles methods to understand materials physics at the intersection of strong correlations, magnetism topology, defects, and disorder:Â
Direct dark matter observation efforts generally use extremely sensitive detectors, coupled to vast amounts of material, at very low temperatures, and operated for several years. The mineral detection approach is a promising alternative using existing crystalline mineral deposits that have been exposed for millions or even billions of years. Nuclear recoils due to interactions with dark matter (and other particles), can form optically active crystalline defects that can readily be observed. Our group performs ab initio simulations to understand the optical properties and formation energies of defects in various minerals in order to understand how to reconstruct the spectrum of incident particles [1][2]. This work is supported by the NSF Growing Convergence Research award 2428507.
Detection of sub-eV neutrinos with coherent elastic neutrino nucleus scattering (CEvNS) in kilogram-scale targets can enable a broad range of nuclear security applications. However, all existing CEvNS detectors that have pushed below 1000 eV detection thresholds have seen an exponential increase in noise rate, regardless of detector material or sensing method. We are using first principles calculations to explore defect formation/relaxation contributions to this noise, either through energy loss through formation events or spurious events due to later relaxation of meta-stable defects. This research is supported by the DARPA QuSen program.
Color center defects have recently emerged as promising candidate systems for realizing a number of quantum technologies, including quantum networks, quantum sensors, and quantum computing. In particular, such defects in silicon can take advantage of decades of technological advances in nanoscale manufacturing processes, and be easily integrated with existing electronic devices which are largely silicon-based. Recently I have studied the connection between spin properties and localization in well known color center defects in silicon [1], developed techniques for computing previously inaccessible defect properties [2], and showed the effect of temperature and disorder on color center linewidths [3].
We are actively developing a database of quantum defects with an online interface at quantumdefects.com.
Topological materials are a prime focus of quantum materials research, with a number of emerging applications including more efficient magnetic memories, spintronics, and energy conversion devices. Our group studies strongly correlated topological materials, in which electron interactions allow for tuning between different states using doping or temperature, or enhance the observable properties of the material. Recent works in this area have focused on the behavior of topological features across a magnetic transition [1], showed topological states switchable by temperature in an actinide system [2], and computed enhanced thermoelectric properties in topological metals with abundant Weyl points [3][4][5].