Topological materials are a prime focus of quantum materials research, with a number of emerging applications including more efficient magnetic memories, spintronics, and energy conversion devices. I study strongly correlated topological materials, in which electron interactions allow for tuning between different states using doping or temperature, or enhance the observable properties of the material. My recent works in this area have focused on the behavior of topological features across a magnetic transition , showed topological states switchable by temperature in an actinide system , and computed enhanced thermoelectric properties in topological metals with abundant Weyl points .
Color center defects have recently emerged as promising candidate systems for realizing a number of quantum technologies, including quantum networks, quantum sensors, and quantum computing. In particular, such defects in silicon can take advantage of decades of technological advances in nanoscale manufacturing processes, and be easily integrated with existing electronic devices which are largely silicon-based. Recently I have studied the connection between spin properties and localization in well known color center defects in silicon , developed techniques for computing previously inaccessible defect properties , and showed the effect of temperature and disorder on color center linewidths .
We are actively developing a database of quantum defects with an online interface at quantumdefects.com.